Toshio Otaki

Title: The Innovations of Toshio Otaki

Introduction

Toshio Otaki is a prominent inventor based in Takasaki, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of GaP type light-emitting devices. With a total of 6 patents to his name, Otaki's work has had a considerable impact on the industry.

Latest Patents

Otaki's latest patents include a method for fabricating a gap type semiconductor substrate of red light. This invention involves a semiconductor substrate for GaP type light-emitting devices, which consists of an n-type single crystal substrate, an n-type GaP layer, and a p-type GaP layer formed on the n-type GaP single crystal substrate. The carbon concentration in the n-type GaP single crystal substrate is more than 1.0×10^16 atoms/cc but less than 1.0×10^17 atoms/cc. The substrate is obtained from an n-type GaP single crystal grown by the Liquid Encapsulation Czochralski method, utilizing B2O3 containing water corresponding to 200 ppm or more as an encapsulation liquid. Another notable patent is for a gap light-emitting device that has a low carbon content in the substrate, which shares similar characteristics to the previous invention.

Career Highlights

Toshio Otaki has been associated with Shin-Etsu Handotai Co., Ltd., where he has contributed to various innovative projects. His expertise in semiconductor technology has positioned him as a key figure in the development of advanced light-emitting devices.

Collaborations

Throughout his career, Otaki has collaborated with notable coworkers such as Munehisa Yanagisawa and Susumu Higuchi. These collaborations have further enhanced his contributions to the field of semiconductor technology.

Conclusion

Toshio Otaki's work in semiconductor technology, particularly in GaP type light-emitting devices, showcases his innovative spirit and dedication to advancing the field. His patents reflect a commitment to improving the efficiency and effectiveness of semiconductor substrates.