The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 1998

Filed:

Aug. 17, 1995
Applicant:
Inventors:

Munehisa Yanagisawa, Takasaki, JP;

Susumu Higuchi, Annaka, JP;

Yuuki Tamura, Annaka, JP;

Akio Nakamura, Annaka, JP;

Toshio Otaki, Takasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438 46 ; 438 22 ; 438 45 ; 438557 ;
Abstract

A semiconductor substrate for GaP type light emitting devices which includes an n-type single crystal substrate, an n-type GaP layer, and a p-type GaP layer formed on the n-type GaP single crystal substrate. The carbon concentration in the n-type GaP single crystal substrate is more than 1.0.times.10.sup.16 atoms/cc but less than 1.0.times.10.sup.17 atoms/cc. The n-type GaP single crystal substrate is obtained from an n-type GaP single crystal grown by the Liquid Encapsulation Czochralski method wherein B.sub.2 O.sub.3 containing water corresponding to 200 ppm or more is used as an encapsulation liquid.


Find Patent Forward Citations

Yanagisawa, Munehisa. (1998). Method for fabricating a gap type semiconductor substrate of red light (U.S. Patent No. 5851850). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5851850

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