This inventor holds 1 USPTO granted patent. Top assignee: Sanyo Electric Co., Ltd.. Active years: 1999.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1999
Title: Toshinari Utsumi: Semiconductor Device Inventor
Introduction
Toshinari Utsumi is an inventor associated with Ashina-Gun, Japan, and Sanyo Electric Co., Ltd. His work includes an invention for integrating semiconductor components used in power-conversion systems.
Latest Patents
Utsumi is credited with 1 patent: “Semiconductor Device and Method of Manufacturing the Same.” The invention forms a vertical MOSFET and a Schottky barrier diode on the same semiconductor substrate, for use as a switching device in a DC–DC converter. It also places the diode’s barrier metal on an electrode portion of the MOSFET and specifies a lower impurity concentration in the diode-forming region than in the MOSFET-forming region.
Career Highlights
Utsumi’s documented patent work reflects a focus on semiconductor-device design and manufacturing. The disclosed structure combines two device types on one substrate and addresses their material and region characteristics.
Collaborations
His listed coworkers include Naofumi Tsuchiya and Kazunori Ohno. The available information identifies them as colleagues but does not specify their individual contributions to the patent.
Conclusion
Toshinari Utsumi’s recorded invention concerns integrating a vertical MOSFET and a Schottky barrier diode to support DC–DC converter switching, highlighting his contribution to semiconductor technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile