The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 1999
Filed:
Jun. 07, 1996
Hiroki Etou, Ora-Gun, JP;
Kazunori Ohno, Ora-Gun, JP;
Takaaki Saito, Ora-Gun, JP;
Naofumi Tsuchiya, Ohta, JP;
Toshinari Utsumi, Ashina-Gun, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
In the present invention, a vertical type MOSFET and a Schottky barrier diode which are used as a switching device of a DC--DC converter are formed on the same semiconductor substrate. Further, a barrier metal which is required for the Schottky barrier diode is also formed on an electrode portion of the vertical type MOSFET. In addition, a Schottky barrier diode forming region is formed to have low impurity concentration than a vertical type MOSFET forming region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile