Company Filing History:
Years Active: 1999
Title: Kazunori Ohno: Innovator in Semiconductor Technology
Introduction
Kazunori Ohno is a prominent inventor based in Ora-Gun, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of devices that enhance the efficiency of power conversion systems.
Latest Patents
Kazunori Ohno holds a patent for a semiconductor device and method of manufacturing the same. This invention involves the formation of a vertical type MOSFET and a Schottky barrier diode on the same semiconductor substrate, which are utilized as switching devices in DC-DC converters. The design also incorporates a barrier metal on the electrode portion of the vertical type MOSFET, ensuring optimal performance. Additionally, the Schottky barrier diode forming region is created with a lower impurity concentration compared to the vertical type MOSFET forming region. This innovative approach enhances the functionality and efficiency of semiconductor devices.
Career Highlights
Kazunori Ohno is associated with Sanyo Electric Co., Ltd., where he has been instrumental in advancing semiconductor technologies. His work has led to improvements in power management systems, making them more efficient and reliable.
Collaborations
Kazunori has collaborated with notable colleagues, including Hiroki Etou and Takaaki Saito. Their combined expertise has contributed to the successful development of innovative semiconductor solutions.
Conclusion
Kazunori Ohno's contributions to semiconductor technology exemplify the impact of innovation in modern electronics. His patent and collaborative efforts continue to influence the industry, paving the way for future advancements.