This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 1977.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1977
Title: Toshimitu Shinoda: Innovator in Epitaxial Growth Technologies
Introduction
Toshimitu Shinoda is a notable inventor hailing from Hamura, Japan. He has made significant contributions to the field of semiconductor manufacturing through his innovative research and development.
Latest Patents
He holds a patent for a method of making an epitaxial growth layer of GaAs.sub.1-x P.sub.x. This groundbreaking patent describes a technique where a layer of GaAs.sub.1-x P.sub.x (0
Career Highlights
Toshimitu is currently associated with Hitachi, Ltd., a leading technology company known for its advancements in various sectors, including electronics and semiconductors. His work encompasses critical aspects of semiconductor technology that have implications for the broader electronics industry.
Collaborations
Shinoda collaborates with esteemed colleagues Masahiko Ogirima and Yuichi Ono. Together, they contribute to advancing technologies that drive innovation within their field.
Conclusion
In conclusion, Toshimitu Shinoda is an influential figure in the semiconductor industry, recognized for his patent on epitaxial growth techniques. His work at Hitachi, Ltd., along with his collaborations, showcases his commitment to advancing technology and innovation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile