The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 1977
Filed:
Jan. 08, 1971
Masahiko Ogirima, Shinjyuku, JA;
Toshimitu Shinoda, Hamura, JA;
Yuichi Ono, Kokubunji, JA;
Hajime Kusumoto, Tama, JA;
Hitachi, Ltd., , JA;
Abstract
A layer of GaAs.sub.1-x P.sub.x (0<x<1) is epitaxially grown on GaAs which is disposed in a reaction tube at a different location from the Ga source by maintaining the GaAs at a temperature range of from about 750.degree. C. to about 850.degree. C., maintaining the Ga source at a temperature higher than that of the GaAs, introducing As.sub.4 gas, PCl.sub.3 gas and H.sub.2 gas or AsCl.sub.3 gas, P.sub.4 gas and H.sub.2 gas into the reaction tube from the Ga source side, whereby said gases react with the Ga source and produce GaCl gas, and contacting said gases including the GaCl gas with the surface of the GaAs.