Company Filing History:
Years Active: 1990-1991
Title: Innovations of Toshimasa Nakamura
Introduction
Toshimasa Nakamura is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor memory technology. With a total of 3 patents to his name, his work has had a lasting impact on the industry.
Latest Patents
One of his latest patents is a nonvolatile semiconductor memory circuit that includes a reliable sense. This nonvolatile memory device features a memory cell with its gate connected to a word line, its source connected to a ground potential, and its drain connected to a power supply voltage via a bit line. Additionally, it includes a dummy cell that has its gate connected to the word line, its source connected to the source potential, and its drain connected to the power supply voltage via a dummy bit line. The design ensures that the conductance of the dummy cell is smaller than that of the memory cell, allowing for a more efficient reading process.
Another notable patent involves a semiconductor memory having a load transistor circuit. In this design, a p-channel MOS transistor is connected in series to a floating gate n-channel MOS transistor, which forms a memory cell. This configuration allows the p-channel MOS transistor to function as the load of the memory cell, stabilizing the data-writing current even when the operational characteristics of the memory cell change.
Career Highlights
Toshimasa Nakamura is currently employed at Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to explore innovative solutions in semiconductor memory technology.
Collaborations
Throughout his career, he has collaborated with notable colleagues such as Yukihiro Saeki and Yukio Wada. These collaborations have further enhanced the development of advanced memory technologies.
Conclusion
Toshimasa Nakamura's contributions to semiconductor memory technology are noteworthy and reflect his dedication to innovation. His patents demonstrate a commitment to improving the efficiency and reliability of memory devices.