The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 1991
Filed:
Sep. 09, 1987
Yukihiro Saeki, Yokohama, JP;
Toshimasa Nakamura, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A p-channel MOS transistor is connected in series to a floating gate n-channel MOS transistor forming a memory cell, so that the p-channel MOS transistor functions as the load of the memory cell. The operational characteristic of the p-channel MOS transistor determines the data-writing current of the memory cell. Hence, hardly any change occurs in the data-writing current, even if the operation characteristic of the memory cell changes. A semiconductor memory includes memory cells constituted by floating gate n-channel MOS transistors. The memory further includes a data-reading, column-selecting circuit comprising n-channel MOS transistors, and a data-writing, column-selecting circuit comprising p-channel MOS transistors. By way of the above structure, the data-writing voltage can be prevented from being lowered.