Yokohama, Japan

Toshiki Mori

This inventor holds 1 USPTO granted patent. Top assignee: Fujitsu Semiconductor Limited. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshiki Mori. Retrieved from https://idiyas.com/inventor/toshiki-mori-6mslqs4i

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Toshiki Mori - Innovator in Semiconductor Technology

Introduction

Toshiki Mori is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device manufacturing method.

Latest Patents

Toshiki Mori holds 1 patent for a semiconductor device manufacturing method. This method involves forming an insulation film containing silicon, oxygen, and carbon over a semiconductor substrate through chemical vapor deposition. The process includes making a UV cure on the insulation film while it is heated at a temperature of 350°C or below, followed by helium plasma processing on the insulation film after the UV cure.

Career Highlights

Mori is currently employed at Fujitsu Semiconductor Limited, where he continues to advance semiconductor technologies. His work has been instrumental in enhancing the efficiency and performance of semiconductor devices.

Collaborations

Mori collaborates with various professionals in the field, including his coworker Yoshiyuki Ohkura. Their combined expertise contributes to the innovative projects at Fujitsu Semiconductor Limited.

Conclusion

Toshiki Mori's contributions to semiconductor technology exemplify the spirit of innovation. His patented methods are paving the way for advancements in the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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