The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Mar. 24, 2011
Applicants:
Yoshiyuki Ohkura, Yokohama, JP;
Toshiki Mori, Yokohama, JP;
Inventors:
Yoshiyuki Ohkura, Yokohama, JP;
Toshiki Mori, Yokohama, JP;
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device manufacturing method includes forming an insulation film containing silicon, oxygen and carbon over a semiconductor substrate by chemical vapor deposition; making UV cure on the insulation film being heated at a temperature of 350° C. or below after the forming the insulation film; and making helium plasma processing on the insulation film after the UV cure.
Quick Actions:
Ohkura, Yoshiyuki. (2014). Semiconductor device manufacturing method (U.S. Patent No. 8716148). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8716148
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile