Toshiki Hisada

USPTO Granted Patents = 33 (Patent Applications = 1)

Average Co-Inventor Count = 2.9

ph-index = 7

Forward Citations = 146(Granted Patents)

Location History:

Kanagawa-ken, JP (2012)
Kanagawa, JP (2020)
Yokohama, JP (1997 - 2023)
Yokohama Kanagawa, JP (2018 - 2024)

Company Filing History:

21 out of 52,711

Kabushiki Kaisha Toshiba

patents

8 out of 2,955

Toshiba Memory Corporation

Years Active: 1997-2025

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33 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 12237014 - Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate (2025-02-25),

2. 11881465 - Semiconductor storage device with transistors of peripheral circuits on two chips (2024-01-23),

3. 11610630 - Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate (2023-03-21),

4. 11302398 - Semiconductor memory device capable of reducing chip size (2022-04-12),

5. 10978151 - Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate (2021-04-13),

6. 10783971 - Semiconductor memory device capable of reducing chip size (2020-09-22),

7. 10431309 - Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate (2019-10-01),

8. 10347341 - Semiconductor memory device capable of reducing chip size (2019-07-09),

9. 10304538 - Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate (2019-05-28),

10. 10068647 - Semiconductor memory device (2018-09-04),

11. 10049745 - Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate (2018-08-14),

12. 9934861 - Semiconductor memory device capable of reducing chip size (2018-04-03),

13. 9691484 - Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate (2017-06-27),

14. 9633736 - Semiconductor memory device capable of reducing chip size (2017-04-25),

15. 9324432 - Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate (2016-04-26),

Title: The Innovator Behind Semiconductor Storage Devices - Toshiki Hisada

Introduction:

Toshiki Hisada is a prolific inventor based in Yokohama, Japan, renowned for his remarkable contributions in the field of semiconductor technology. With an impressive portfolio of 32 patents, Hisada's innovative work has significantly impacted the world of memory storage devices.

Latest Patents:

His latest patents showcase his expertise in semiconductor storage devices, particularly focusing on designs with transistors of peripheral circuits on two chips. One notable invention is the "Semiconductor storage device with transistors of peripheral circuits on two chips", which revolutionizes the structure and efficiency of semiconductor storage devices.

Career Highlights:

Hisada has made substantial contributions to renowned companies like Toshiba Corporation and Toshiba Memory Corporation. His innovative spirit and technical acumen have played a pivotal role in shaping the semiconductor industry, earning him a well-deserved reputation for excellence and ingenuity.

Collaborations:

Throughout his career, Hisada has collaborated with talented individuals such as Takatoshi Minamoto and Dai Nakamura. These fruitful collaborations have led to groundbreaking innovations and have further bolstered Hisada's status as a visionary in the field of semiconductor technology.

Conclusion:

In conclusion, Toshiki Hisada stands as a trailblazer in the realm of semiconductor storage devices, with a remarkable track record of patents and inventions that have redefined the industry. His relentless pursuit of innovation and his collaborations with top talents highlight his significant contributions to the field, making him a respected figure in the world of technology and patents.

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