Kawasaki, Japan

Toshihiro Sugii

This inventor holds 3 USPTO granted patents. Top assignee: Fujitsu Corporation. Active years: 1985-1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshihiro Sugii. Retrieved from https://idiyas.com/inventor/toshihiro-sugii

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.8

ph-index = 3

Forward Citations = 61(Granted Patents)


Location History:

  • Tokyo, JP (1985)
  • Kawasaki, JP (1990)
  • Hadano, JP (1992)

Company Filing History:


Years Active: 1985-1992

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3 patents (USPTO):Explore Patents

Title: Toshihiro Sugii: Innovator in Semiconductor Technology

Introduction

Toshihiro Sugii is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

One of Sugii's latest patents is a method for manufacturing a hetero bipolar transistor. This innovation involves a protection layer designed to safeguard a silicon dioxide layer on a silicon substrate within a semiconductor device. The protection layer prevents reactions with reactant gases used in chemical vapor deposition methods for forming silicon carbide layers. This silicon carbide layer serves as a wide energy band gap emitter layer for the semiconductor device. The protection layer is constructed from materials that are non-reactive with gases such as trichlorosilane and methane. For instance, it can be made from titanium nitride formed by a sputtering method or nitrided silicon oxide created by heating the silicon dioxide layer.

Another notable patent by Sugii pertains to a semiconductor device featuring an electrode wiring layer. This layer includes an upper conductive layer and a lower conductive layer, which is separated by a barrier layer that prevents reactions. The barrier layer consists of an insulating film that is thin enough to allow the flow of tunnel current.

Career Highlights

Toshihiro Sugii is currently employed at Fujitsu Corporation, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.

Collaborations

Sugii has collaborated with notable colleagues, including Takashi Ito and Hiroshi Horie. Their combined expertise has contributed to the development of cutting-edge technologies in the semiconductor field.

Conclusion

Toshihiro Sugii is a key figure in semiconductor innovation, with a focus on improving device performance through his patented technologies. His contributions continue to shape the future of semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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