The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1992
Filed:
Apr. 27, 1990
Takashi Ito, Kawasaki, JP;
Toshihiro Sugii, Hadano, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A protection layer for protecting a silicon dioxide layer formed on a silicon substrate of a semiconductor device. The protection layer protects the silicon dioxide layer from being reacting with a reactant gas used in a chemical vapor deposition method performed for forming a silicon carbide layer. The silicon carbide layer is to be a wide energy band gap emitter layer of the semiconductor device. The protection layer is formed on the silicon dioxide layer, and the silicon carbide layer is formed in an active region formed on the silicon substrate in an aperture provided by etching the protection layer and the silicon dioxide layer. The protection layer is made of material which is non-reactive with the reactant gas consisting of, for example, trichlorosilane and methane. The protection layer is, for example, titanium nitride formed by a sputtering method, or nitrided silicon oxide formed by heating the silicon dioxide layer.