Toshihide Tsuboi

This inventor holds 7 USPTO granted patents. Top assignees: Nec Corporation, Nippon Electric Co., Ltd.. Active years: 1984-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshihide Tsuboi. Retrieved from https://idiyas.com/inventor/toshihide-tsuboi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7

% Patents Active = 100.0

Average Co-Inventor Count = 1.2

ph-index = 5

Forward Citations = 208(Granted Patents)

Company Filing History:

Nippon Electric Co., Ltd.

patents

Years Active: 1984-1999

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7 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 5883415 - CMOS semiconductor device with improved layout of transistors near LCD (1999-03-16),

2. 5760447 - Semiconductor device having pull-up or pull-down resistance (1998-06-02),

3. 5432802 - Information processing device having electrically erasable programmable (1995-07-11),

4. 5414375 - CMOS output circuit with open drain transistor (1995-05-09),

5. 5287469 - Electrically erasable and programmable non-volatile memory (EEPROM), (1994-02-15),

6. 5086413 - Non-volatile semiconductor memory device having an improved testing mode (1992-02-04),

7. 4490830 - Radio signal transmission system including a plurality of transmitters (1984-12-25),

Title: The Innovations of Toshihide Tsuboi

Introduction

Toshihide Tsuboi is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of seven patents. His work focuses on improving the efficiency and functionality of CMOS semiconductor devices.

Latest Patents

One of Tsuboi's latest patents is a CMOS semiconductor device with an improved layout of transistors near LCD drive terminals. This innovation aims to reduce chip size while maintaining resistance against electrostatic destruction and latch-up. The design selectively arranges MOSFETs whose sources are not connected to an electric source or ground between two protective diffusion layers of different polarities. Another notable patent is for a semiconductor device that includes a CMOSFET, which consists of both n-channel and p-channel MOSFETs. This device features a terminal connected to a node that links the drains of the MOSFETs, with a pull-up or pull-down resistor connected to a power source potential.

Career Highlights

Throughout his career, Toshihide Tsuboi has worked with notable companies such as NEC Corporation and Nippon Electric Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Tsuboi has collaborated with several talented individuals in his field, including Tomokazu Kai and Norio Funahashi. These partnerships have contributed to the advancement of his projects and patents.

Conclusion

Toshihide Tsuboi's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry and pave the way for future innovations.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]