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For the Inventor, By the Inventor

Tokyo, Japan

Toshihide Izumiya

This inventor holds 9 USPTO granted patents and 1 published patent application. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1991-1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshihide Izumiya. Retrieved from https://idiyas.com/inventor/toshihide-izumiya

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 9 

% Patents Active = 100.0

Average Co-Inventor Count = 3.1

ph-index = 8

Forward Citations = 299(Granted Patents)


Company Filing History:

goldMedal9 out of 53,262 
 
Kabushiki Kaisha Toshiba
 patents

Years Active: 1991-1998

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9 patents (USPTO):Explore Patents
1. 5822349 - Semiconductor device and method of manufacturing the same (1998-10-13),
2. 5317167 - Semiconductor light-emitting device with InGaAlp (1994-05-31),
3. 5273933 - Vapor phase growth method of forming film in process of manufacturing (1993-12-28),
4. 5235194 - Semiconductor light-emitting device with InGaAlP (1993-08-10),
5. 5103271 - Semiconductor light emitting device and method of fabricating the same (1992-04-07),
6. 5079184 - Method of manufacturing III-IV group compound semiconductor device (1992-01-07),
7. 5076860 - AlGaN compound semiconductor material (1991-12-31),
8. 5042043 - Semiconductor laser using five-element compound semiconductor (1991-08-20),
9. 5005057 - Semiconductor light-emitting diode and method of manufacturing the same (1991-04-02),

Title: Toshihide Izumiya: Innovator in Semiconductor Technology

Introduction

Toshihide Izumiya is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work focuses on enhancing the efficiency and functionality of semiconductor devices.

Latest Patents

Izumiya's latest patents include innovative designs for semiconductor devices. One notable invention is a semiconductor device that features a p-type InP substrate with a mesa stripe, which includes an active layer and an n-type cladding layer. This design incorporates a semiconductor layer that buries the side surfaces of the mesa stripe, containing both n-type and p-type current blocking layers. The n-type current blocking layer is particularly noteworthy for containing approximately 8.times.10.sup.17 cm.sup.-3 or more of selenium as an impurity, ensuring that the n-type current blocking layer and the n-type cladding layer do not contact each other.

Another significant patent is for a semiconductor light-emitting device that comprises a light-emitting layer with a pn junction formed by multiple In.sub.x Ga.sub.y Al.sub.1-x-y P layers. This device also includes a light-emitting-layer holding layer made of Ga.sub.1-w Al.sub.w As, which is designed to minimize light absorption while improving light emission efficiency.

Career Highlights

Toshihide Izumiya is currently employed at Kabushiki Kaisha Toshiba, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing devices that are not only efficient but also reliable for various applications.

Collaborations

Izumiya has collaborated with notable colleagues, including Yasuo Ohba and Ako Hatano. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Toshihide Izumiya's contributions to semiconductor technology are significant and impactful. His innovative patents and collaborations highlight his dedication to advancing the field. His work continues to influence the development of efficient semiconductor devices, making him a key figure in this industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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