The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 1992

Filed:

Sep. 27, 1990
Applicant:
Inventors:

Toshihide Izumiya, Tokyo, JP;

Yasuo Ohba, Yokohama, JP;

Ako Hatano, Tokyo, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01S / ;
U.S. Cl.
CPC ...
357 17 ; 357 16 ; 357 61 ; 372 45 ;
Abstract

A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.l-x-y P (0.ltoreq.x, y.ltoreq.l) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.l-w Al.sub.w As (0.ltoreq.w.ltoreq.l) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer even though its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.


Find Patent Forward Citations

Izumiya, Toshihide. (1992). Semiconductor light emitting device and method of fabricating the same (U.S. Patent No. 5103271). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5103271

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