Essex Junction, VT, United States of America

Toshihara Furukawa

This inventor holds 2 USPTO granted patents. Top assignees: International Business Machines Corporation, Tokyo Electron Limited. Active years: 2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshihara Furukawa. Retrieved from https://idiyas.com/inventor/toshihara-furukawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 12.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2007

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2 patents (USPTO):Explore Patents

Title: The Innovative Journey of Toshihara Furukawa

Introduction: Toshihara Furukawa, an accomplished inventor based in Essex Junction, VT, has made significant contributions to the field of materials science through his groundbreaking patents. With a total of two patents to his name, he has focused on the development of ultra-thin oxide and oxynitride layers, which have applications in various high-tech industries.

Latest Patents: Furukawa's latest patents include "Formation of ultra-thin oxide layers by self-limiting interfacial oxidation" and "Method of forming uniform ultra-thin oxynitride layers." His first patent details a process utilizing low-pressure techniques to achieve self-limiting oxidation of substrates, creating ultra-thin oxide layers with remarkable precision. The process can accommodate various initial dielectric configurations, ensuring versatility in application. Notably, the patent highlights the ability to achieve SiO layers with a thickness of approximately 15 angstroms, maintaining a uniformity variance of less than 1 angstrom across substrates.

His second patent outlines a similar methodology for creating ultra-thin oxynitride layers, again emphasizing the benefits of low-pressure processing. This innovation also supports various initial dielectric configurations, allowing for a consistent approach in producing high-quality materials. Both patents showcase Furukawa's expertise in thin-film technology and its importance in modern electronics.

Career Highlights: Toshihara Furukawa's career spans notable positions at industry leaders such as Tokyo Electron Limited and International Business Machines Corporation (IBM). His work at these prestigious organizations has solidified his reputation as a leading figure in the development of advanced material processing techniques.

Collaborations: Throughout his career, Furukawa has collaborated with esteemed colleagues, including David L. O'Meara and Cory Wajda. These partnerships have likely fostered a dynamic exchange of ideas and enhanced the innovation process, reflecting the collaborative nature of high-tech research and development.

Conclusion: Toshihara Furukawa's innovative contributions have significantly advanced the understanding and application of ultra-thin oxide and oxynitride layers in technology. With a keen dedication to improving material processing techniques, his patents not only demonstrate his expertise but also highlight the importance of innovation in shaping the future of various industries. As he continues to push the boundaries of material science, Furukawa remains an inventor worth following in the realm of technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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