Chiryu, Japan

Toshifumi Izumi

This inventor holds 1 USPTO granted patent. Top assignee: Denso Corporation. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshifumi Izumi. Retrieved from https://idiyas.com/inventor/toshifumi-izumi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 229(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Innovator Spotlight: Toshifumi Izumi - Revolutionizing Semiconductor Substrate Manufacturing

Introduction: Toshifumi Izumi, a visionary inventor hailing from Chiryu, JP, has made significant contributions to the field of semiconductor substrate manufacturing. With a keen eye for innovation and a passion for advancing technology, Izumi has secured a patent that has revolutionized the industry.

Latest Patents: Izumi's groundbreaking patent, titled "Semiconductor substrate and method of manufacturing the same," focuses on the direct bonding of a semiconductor substrate and a base substrate. By implementing a protective film removal step to enhance bonding uniformity, Izumi's method ensures the production of high-quality semiconductor substrates at a low cost.

Career Highlights: Currently employed at Denso Corporation, Izumi continues to drive technological advancements in the semiconductor industry. His expertise in manufacturing processes and materials science has earned him a reputation as a trailblazer in the field.

Collaborations: Izumi has collaborated with esteemed colleagues such as Shoichi Yamauchi and Hisayoshi Ohshima. Together, they have worked tirelessly to push the boundaries of semiconductor substrate technology and bring innovative solutions to the market.

Conclusion: Toshifumi Izumi's dedication to innovation and commitment to excellence have solidified his status as a pioneer in semiconductor substrate manufacturing. His patented method stands as a testament to his ingenuity and relentless pursuit of technological advancement, inspiring future generations of inventors to push the boundaries of what is possible in the world of semiconductors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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