The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2003

Filed:

Jul. 17, 1998
Applicant:
Inventors:

Shoichi Yamauchi, Obu, JP;

Hisayoshi Ohshima, Obu, JP;

Masaki Matsui, Nagoya, JP;

Kunihiro Onoda, Nagoya, JP;

Tadao Ooka, Aichi-gun, JP;

Akitoshi Yamanaka, Hekinan, JP;

Toshifumi Izumi, Chiryu, JP;

Assignee:

Denso Corporation, Kariya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/130 ; H01L 2/146 ;
U.S. Cl.
CPC ...
H01L 2/130 ; H01L 2/146 ;
Abstract

Before a semiconductor substrate and a base substrate is directly bonded to one another, in a protective film removing step, a contamination protective film formed on the semiconductor substrate to protect it from contamination during an ion implanting step is removed. Consequently, even when flatness of the contamination protective film is degraded during the ion implanting step or even when contaminants remain in a segregated state in the vicinity of the surface of the contamination protective film, the state of the bonding between the semiconductor substrate and the base substrate after the bonding step can be made uniform over the entire area of the bonding. As a result, a high-quality semiconductor substrate can be manufactured at low cost.


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