Toru Yamaoka

Title: Toru Yamaoka: Innovator in Semiconductor Technology

Introduction

Toru Yamaoka is a distinguished inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on improving the performance and reliability of integrated circuit devices.

Latest Patents

Yamaoka's latest patents include a "Method for manufacturing low breakdown voltage MOS and high breakdown" and a "Method of manufacturing an antifuse element having a controlled thickness." The first patent addresses the challenges associated with drain breakdown voltage in high breakdown voltage CMOS transistors. By creating separate channel dope regions with varying impurity concentrations, Yamaoka enhances the electrical characteristics of these transistors while minimizing their area. The second patent introduces a method for producing an antifuse element with a uniform thickness, which improves the control of insulation breakdown voltage in the 'off' state. This innovation utilizes a complexed film of amorphous silicon, silicon nitride, and silicon oxide, ensuring better performance in semiconductor applications.

Career Highlights

Toru Yamaoka has been associated with Matsushita Electronics Corporation, where he has contributed to various advancements in semiconductor technology. His expertise in manufacturing processes has led to significant improvements in the reliability and efficiency of electronic components.

Collaborations

Yamaoka has worked alongside notable colleagues such as Hirotsugu Honda and Hiroshi Sakurai. Their collaborative efforts have furthered the development of innovative solutions in the semiconductor industry.

Conclusion

Toru Yamaoka's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in integrated circuit devices, showcasing the importance of innovation in technology.