The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 1999
Filed:
Feb. 26, 1997
Matsushita Electronics Corporation, Osaka, JP;
Abstract
In a semiconductor integrated circuit device having a high breakdown voltage CMOS transistor integrated for programming a programmable element, the present invention is intended to solve a problem of the drain breakdown voltage of the high breakdown voltage transistor going low as a result of a structure that the standard transistor and the high breakdown voltage transistor share common channel dope region. On a P-type monocrystal silicon substrate of 10-20 .OMEGA.cm specific resistivity having a P-well region and a silicon oxide film for separating the elements, a channel dope region for an insulated-gate type field effect transistor A and a channel dope region for an insulated-gate type field effect transistor B are formed separately, making the impurity concentration in one channel dope region two to ten times as high as that in the other channel dope region. By so doing, the characteristics of the two kinds of insulated-gate type field effect transistors may be controlled independently, dispersion in the electrical characteristics of the high breakdown voltage CMOS transistor is suppressed, and the area for the same is made smaller.