Clifton Park, NY, United States of America

Tong Weihua


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):

Title: Innovations of Tong Weihua in Semiconductor Technology

Introduction

Tong Weihua is a notable inventor based in Clifton Park, NY (US), recognized for his contributions to semiconductor technology. He holds a patent that showcases his expertise in the fabrication of advanced isolation structures used in field effect transistors.

Latest Patents

Tong Weihua's most recent patent is titled "Fabrication of reverse shallow trench isolation structures with super-steep retrograde wells." This patent outlines methods for forming reverse shallow trench isolation structures that enhance the performance of field effect transistor elements. The innovative process includes a thermal oxidation method to create a layer of thermal oxide material on a semiconductor substrate, followed by the formation of openings that define isolation regions.

Career Highlights

Throughout his career, Tong Weihua has made significant strides in semiconductor fabrication techniques. His work has contributed to advancements in the efficiency and effectiveness of semiconductor devices, which are crucial in various electronic applications. He is currently associated with GlobalFoundries Inc., a leading company in semiconductor manufacturing.

Collaborations

Tong Weihua has collaborated with esteemed colleagues such as Krishnan Bharat and Lun Zhao. Their combined expertise has fostered innovation and development in the field of semiconductor technology.

Conclusion

Tong Weihua's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the industry. His work continues to influence the development of efficient electronic devices.

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