Globalfoundries Inc.

Tong Weihua

Lun Zhao

Krishnan Bharat

Lee Yongmeng

Kim Sun

Kim Seung

Generally, the present disclosure is directed to methods for forming reverse shallow trench isolation structures with super-steep retrograde wells for use with field effect transistor elements. One illustrative method disclosed herein includes performing a thermal oxidation process to form a layer of thermal oxide material on a semiconductor layer of a semiconductor substrate, and forming a plurality of openings in the layer of thermal oxide material to form a plurality of isolation regions from the layer of thermal oxide material, wherein each of the plurality of openings exposes a respective surface region of the semiconductor layer.

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Clifton Park, NY, United States of America

Tong Weihua