Tong Boon Lee

Title: Innovations by Inventor Tong Boon Lee

Introduction

Tong Boon Lee is a notable inventor based in Singapore, recognized for his contributions to semiconductor technology. He has developed a unique method that enhances the fabrication of CMOS devices, showcasing his expertise in the field.

Latest Patents

One of Tong Boon Lee's significant patents is titled "Method of self-aligning a damascene gate structure to isolation regions." This innovative process allows for the fabrication of CMOS devices where conductive gate structures are defined in a self-aligned manner to shallow trench isolation (STI) regions. The method eliminates the need for photolithographic procedures, streamlining the manufacturing process. It involves defining shallow trench openings in semiconductor substrates, filling them with silicon oxide, and removing dummy gate structures to create STI regions. The process culminates in the formation of a conductive gate structure that is self-aligned to the STI regions, enhancing device performance.

Career Highlights

Tong Boon Lee is associated with Chartered Semiconductor Manufacturing Ltd, a corporation known for its advancements in semiconductor manufacturing. His work has significantly impacted the efficiency and effectiveness of CMOS device fabrication.

Collaborations

Throughout his career, Tong Boon Lee has collaborated with esteemed colleagues, including Daniel Yen and Ching-Thiam Chung. These partnerships have contributed to the development of innovative technologies in the semiconductor industry.

Conclusion

Tong Boon Lee's contributions to semiconductor technology, particularly through his patented methods, highlight his role as a leading inventor in the field. His work continues to influence advancements in CMOS device fabrication.