Tokyo, Japan

Tomoyuki Hora

This inventor holds 1 USPTO granted patent. Top assignee: Sumco Corporation. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tomoyuki Hora. Retrieved from https://idiyas.com/inventor/tomoyuki-hora

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Tomoyuki Hora: Innovator in Semiconductor Manufacturing

Introduction

Tomoyuki Hora is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent.

Latest Patents

Tomoyuki Hora holds a patent for a method of manufacturing semiconductor wafers. This patent involves forming a strain relaxation SiGe layer on an insulating layer of a SOI wafer. The process includes producing a semiconductor wafer by forming a lattice relaxation or a partly lattice-relaxed strain relaxation SiGe layer on an insulating layer in a SOI wafer. The SiGe layer is formed on the SOI layer with a gradient of Ge concentration that gradually decreases toward the surface, followed by a heat treatment in an oxidizing atmosphere.

Career Highlights

Tomoyuki Hora is associated with Sumco Corporation, a leading company in the semiconductor industry. His work has been instrumental in advancing semiconductor technology and improving manufacturing processes.

Collaborations

He has collaborated with notable coworkers, including Koji Matsumoto and Akihiko Endo, contributing to various projects within the semiconductor field.

Conclusion

Tomoyuki Hora's innovative work in semiconductor manufacturing exemplifies the importance of research and development in technology. His contributions continue to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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