The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
Jan. 05, 2007
Koji Matsumoto, Tokyo, JP;
Tomoyuki Hora, Tokyo, JP;
Akihiko Endo, Tokyo, JP;
Etsurou Morita, Tokyo, JP;
Masaharu Ninomiya, Tokyo, JP;
Koji Matsumoto, Tokyo, JP;
Tomoyuki Hora, Tokyo, JP;
Akihiko Endo, Tokyo, JP;
Etsurou Morita, Tokyo, JP;
Masaharu Ninomiya, Tokyo, JP;
Sumco Corporation, Tokyo, JP;
Abstract
A semiconductor wafer is produced at a step of forming a lattice relaxation or a partly lattice-relaxed strain relaxation SiGe layer on an insulating layer in a SOI wafer comprising an insulating layer and a SOI layer, wherein at least an upper layer side portion of the SiGe layer is formed on the SOI layer at a gradient of Ge concentration gradually decreasing toward the surface and then subjected to a heat treatment in an oxidizing atmosphere.