Kakegawa, Japan

Tomotsugu Yano

This inventor holds 1 USPTO granted patent and 3 published patent applications and 1 EPO patent. Top assignee: Merck Patent Gmbh. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tomotsugu Yano. Retrieved from https://idiyas.com/inventor/tomotsugu-yano

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

 

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Tomotsugu Yano: Innovator in Polymer Semiconductor Technology

Introduction

Tomotsugu Yano is a notable inventor based in Kakegawa, Japan. He has made significant contributions to the field of polymer semiconductor technology. His innovative work focuses on developing materials that enhance the efficiency of film formation processes.

Latest Patents

Yano holds 1 patent for a polymer and semiconductor composition. His patent describes a method for manufacturing film using a semiconductor composition. The invention aims to provide a novel polymer that reduces sublimate during film formation. The polymer comprises at least one structural unit selected from a specific group, ensuring optimal performance in semiconductor applications.

Career Highlights

Yano is currently associated with Merck Patent GmbH, where he continues to advance his research in polymer technologies. His work has been instrumental in developing new materials that meet the demands of modern semiconductor applications.

Collaborations

Yano collaborates with esteemed colleagues, including Toshiya Okamura and Hiroshi Hitokawa. Their combined expertise fosters innovation and drives advancements in the field.

Conclusion

Tomotsugu Yano's contributions to polymer semiconductor technology exemplify the impact of innovative thinking in material science. His work continues to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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