Company Filing History:

21 out of 21,351

Mitsubishi Denki Kabushiki Kaisha

patents

2 out of 3,781

Renesas Technology Corp.

patents

1 out of 7,524

Renesas Electronics Corporation

patents

Years Active: 1994-2012

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24 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8339850 - Semiconductor device (2012-12-25),

2. 6831864 - Method of erasing data of nonvolatile semiconductor memory unit (2004-12-14),

3. 6760259 - Non-volatile semiconductor memory device that can be fabricated with erasure unit modified (2004-07-06),

4. 6515900 - Non-volatile memory with background operation function (2003-02-04),

5. 6483748 - Nonvolatile memory with background operation function (2002-11-19),

6. 6388921 - Nonvolatile semiconductor memory device with improved reliability and operation speed (2002-05-14),

7. 6243292 - Nonvolatile semiconductor memory device capable of reducing memory array area (2001-06-05),

8. 6069518 - Semiconductor device allowing generation of desired internal voltage at (2000-05-30),

9. 5999475 - Internal potential generation circuit that can output a plurality of (1999-12-07),

10. 5898606 - Electrically programmable and erasable nonvolatile semiconductor memory (1999-04-27),

11. 5847994 - Non-volatile semiconductor memory device having a back ground operation (1998-12-08),

12. 5745417 - Electrically programmable and erasable nonvolatile semiconductor memory (1998-04-28),

13. 5659505 - Electrically programmable and erasable nonvolatile semiconductor memory (1997-08-19),

14. 5615149 - Non-volatile semiconductor memory device incorporating data latch and (1997-03-25),

15. 5602778 - Nonvolatile semiconductor memory device with a row redundancy circuit (1997-02-11),

Title: Tomoshi Futatsuya: Innovator in Semiconductor Technology

Introduction

Tomoshi Futatsuya is a remarkable inventor based in Hyogo, Japan, known for his significant contributions to the field of semiconductor technology. With a total of 24 patents to his name, his work has greatly impacted the efficiency and functionality of nonvolatile memory devices.

Latest Patents

Futatsuya's latest patents include a groundbreaking semiconductor device designed to enhance nonvolatile memory functions. This invention optimizes erase time and enables efficient data access. The device employs a command register/control circuit, applying an erase voltage to an embedded erase gate wiring within the memory cell boundary region. This facilitates an effective transfer of electrical charge between a floating gate and an embedded erase gate during the erase operation.

Another notable patent is a method for erasing data from a nonvolatile semiconductor memory unit. This method involves several steps, including the application of preliminary write pulses to memory transistors and the iterative adjustment of erase and write pulse intensities. The process ensures that memory transistors do not end in an overerased state, contributing to the reliability of the stored data.

Career Highlights

Futatsuya has contributed to the semiconductor industry through his work at notable companies such as Mitsubishi Electric Corporation and Renesas Technology Corporation. His experiences at these organizations have helped him refine his expertise in semiconductor devices and their applications.

Collaborations

Throughout his career, Tomoshi Futatsuya has collaborated with esteemed colleagues, including Yoshikazu Miyawaki and Shinichi Kobayashi. These partnerships have fostered innovation and advanced the development of new technologies in the semiconductor field.

Conclusion

Tomoshi Futatsuya's impressive record of inventions and patents showcases his dedication to pushing the boundaries of semiconductor technology. His contributions continue to influence the industry, paving the way for advancements in nonvolatile memory devices that enhance efficiency and performance.

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