Hyogo, Japan

Tomoshi Futatsuya

This inventor holds 24 USPTO granted patents and 1 published patent application, primarily in Non-Volatile Memory. Top assignees: Mitsubishi Denki Kabushiki Kaisha, Renesas Technology Corp., Renesas Electronics Corporation. Active years: 1994-2012.

USPTO Granted Patents = 24 

% Patents Active = 95.8

Average Co-Inventor Count = 4.2

ph-index = 15

Forward Citations = 610(Granted Patents)


Location History:

  • Hyogo-ken, JP (1996 - 1999)
  • Hyogo, JP (1994 - 2004)
  • Tokyo, JP (2004 - 2012)

Company Filing History:


Years Active: 1994-2012

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Areas of Expertise:
Non-Volatile Memory
Semiconductor Device
Data Erasure
Memory Reliability
Internal Voltage Generation
Background Operation
Memory Array Area
Electrically Programmable
Erasable Memory
Data Latch
Row Redundancy
Operation Speed
24 patents (USPTO):Explore Patents

Title: Tomoshi Futatsuya: Innovator in Semiconductor Technology

Introduction

Tomoshi Futatsuya is a remarkable inventor based in Hyogo, Japan, known for his significant contributions to the field of semiconductor technology. With a total of 24 patents to his name, his work has greatly impacted the efficiency and functionality of nonvolatile memory devices.

Latest Patents

Futatsuya's latest patents include a groundbreaking semiconductor device designed to enhance nonvolatile memory functions. This invention optimizes erase time and enables efficient data access. The device employs a command register/control circuit, applying an erase voltage to an embedded erase gate wiring within the memory cell boundary region. This facilitates an effective transfer of electrical charge between a floating gate and an embedded erase gate during the erase operation.

Another notable patent is a method for erasing data from a nonvolatile semiconductor memory unit. This method involves several steps, including the application of preliminary write pulses to memory transistors and the iterative adjustment of erase and write pulse intensities. The process ensures that memory transistors do not end in an overerased state, contributing to the reliability of the stored data.

Career Highlights

Futatsuya has contributed to the semiconductor industry through his work at notable companies such as Mitsubishi Electric Corporation and Renesas Technology Corporation. His experiences at these organizations have helped him refine his expertise in semiconductor devices and their applications.

Collaborations

Throughout his career, Tomoshi Futatsuya has collaborated with esteemed colleagues, including Yoshikazu Miyawaki and Shinichi Kobayashi. These partnerships have fostered innovation and advanced the development of new technologies in the semiconductor field.

Conclusion

Tomoshi Futatsuya's impressive record of inventions and patents showcases his dedication to pushing the boundaries of semiconductor technology. His contributions continue to influence the industry, paving the way for advancements in nonvolatile memory devices that enhance efficiency and performance.

Profile summary based on public USPTO records.
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