This inventor holds 1 USPTO granted patent. Top assignee: Murata Manufacturing Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Tomomi Nakano: Inventor in Semiconductor Technology.
Introduction
Tomomi Nakano is an inventor associated with Nagaokakyo, Japan, and Murata Manufacturing Co., Ltd. Her work includes a patent for a field-effect transistor structure using two-dimensional materials or carbon nanotubes.
Latest Patents
Nakano is credited with 1 patent: “Structure and Field Effect Transistor.” The invention describes a transistor with a substrate, a material layer containing a two-dimensional material or carbon nanotubes, and particles positioned between the substrate and the material layer.
Career Highlights
Nakano’s listed patent reflects work on transistor structures and materials relevant to semiconductor technology. She is associated with Murata Manufacturing Co., Ltd.
Collaborations
Her listed coworkers include Hiroki Sato and Naruto Miyakawa.
Conclusion
Tomomi Nakano’s patent focuses on a field-effect transistor structure that combines a substrate, advanced material layers, and interposed particles.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile