The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Jul. 24, 2023
Applicant:
Murata Manufacturing Co., Ltd., Nagaokakyo, JP;
Inventors:
Hiroki Sato, Nagaokakyo, JP;
Naruto Miyakawa, Nagaokakyo, JP;
Shota Ushiba, Nagaokakyo, JP;
Ayumi Shinagawa, Nagaokakyo, JP;
Tomomi Nakano, Nagaokakyo, JP;
Yuka Tokuda, Nagaokakyo, JP;
Madoka Nishio, Nagaokakyo, JP;
Shinsuke Tani, Nagaokakyo, JP;
Assignee:
MURATA MANUFACTURING CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 62/80 (2025.01); H10D 62/83 (2025.01); H10D 64/20 (2025.01); H10K 10/46 (2023.01); H10K 85/00 (2023.01);
U.S. Cl.
CPC ...
H10K 10/484 (2023.02); H10D 30/01 (2025.01); H10D 30/031 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 62/155 (2025.01); H10D 62/159 (2025.01); H10D 62/8303 (2025.01); H10D 62/882 (2025.01); H10D 64/205 (2025.01); H10K 85/00 (2023.02);
Abstract
A field effect transistor includes a substrate, a material layer on a surface of the substrate and including a two-dimensional material or carbon nanotubes, and particles interposed between the substrate and the material layer.