Nagaokakyo, Japan

Hiroki Sato

This inventor holds 1 USPTO granted patent. Top assignee: Murata Manufacturing Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroki Sato. Retrieved from https://idiyas.com/inventor/hiroki-sato-9c4u5xad

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Hiroki Sato: Innovator in Field Effect Transistor Technology

Introduction

Hiroki Sato is a prominent inventor based in Nagaokakyo, Japan. He has made significant contributions to the field of electronics, particularly in the development of field effect transistors. His innovative work has garnered attention in the industry and has led to the filing of a patent.

Latest Patents

Hiroki Sato holds a patent for a novel structure and field effect transistor. This invention includes a substrate, a material layer on the surface of the substrate that comprises a two-dimensional material or carbon nanotubes, and particles interposed between the substrate and the material layer. This innovative design aims to enhance the performance and efficiency of field effect transistors.

Career Highlights

Hiroki Sato is currently employed at Murata Manufacturing Co., Ltd., a leading company in the electronics sector. His work at Murata has allowed him to collaborate with other talented engineers and researchers, further advancing the field of electronic components.

Collaborations

Hiroki has worked alongside notable colleagues such as Naruto Miyakawa and Shota Ushiba. Their combined expertise has contributed to the successful development of innovative technologies within the company.

Conclusion

Hiroki Sato is a dedicated inventor whose work in field effect transistors exemplifies innovation in the electronics industry. His contributions continue to influence advancements in technology and inspire future developments.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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