Anpachi-gun, Japan

Tomohiro Nishiwaki

This inventor holds 1 USPTO granted patent. Top assignees: Sanyo Electric Co., Ltd., Sanyo Semiconductor Co., Ltd.. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tomohiro Nishiwaki. Retrieved from https://idiyas.com/inventor/tomohiro-nishiwaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Tomohiro Nishiwaki: Innovator in Semiconductor Manufacturing

Introduction

Tomohiro Nishiwaki is a notable inventor based in Anpachi-gun, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent.

Latest Patents

Nishiwaki holds a patent for a method of manufacturing semiconductor integrated circuit devices. This patent addresses the issue of cracks generated in a resist film part used to form an opening in a photoreceptor. The method involves forming a resist pattern in a shape that disperses stress, which is generated during the hardening process of the resist. By creating an opening in a planar shape without corners, the risk of unintended etching is minimized.

Career Highlights

Throughout his career, Nishiwaki has worked with prominent companies such as Sanyo Electric Co., Ltd. and Sanyo Semiconductor Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology.

Collaborations

Nishiwaki has collaborated with notable coworkers, including Kazushige Kaneko and Tetsuya Yamada. Their collective efforts have further advanced the field of semiconductor manufacturing.

Conclusion

Tomohiro Nishiwaki's innovative approach to semiconductor manufacturing has led to valuable advancements in the industry. His patent reflects a deep understanding of the challenges faced in this field and offers practical solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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