Ebina, Japan

Tomohiro Migita

This inventor holds 1 USPTO granted patent. Top assignee: Canon Kabushiki Kaisha. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tomohiro Migita. Retrieved from https://idiyas.com/inventor/tomohiro-migita

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 6.0

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Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Innovations by Tomohiro Migita in Semiconductor Manufacturing

Introduction

Tomohiro Migita is a notable inventor based in Ebina, Japan. He has made significant contributions to the field of semiconductor manufacturing. His innovative methods have paved the way for advancements in technology.

Latest Patents

Tomohiro Migita holds a patent for a method of manufacturing a semiconductor device. This method involves creating a twin well structure by ion-implanting a first conductivity type impurity in adjacent regions of a semiconductor substrate. The process includes forming a resist pattern to cover one region while exposing another, followed by ion-implanting a second conductivity type impurity at a higher concentration. The final step involves thermal-diffusing both types of impurities to achieve the desired semiconductor properties. He has 1 patent to his name.

Career Highlights

Migita is currently employed at Canon Kabushiki Kaisha, a leading company in the imaging and printing industry. His work at Canon has allowed him to focus on innovative semiconductor technologies that enhance the performance of electronic devices.

Collaborations

Throughout his career, Tomohiro Migita has collaborated with esteemed colleagues such as Nobuyuki Suzuki and Satoshi Suzuki. These partnerships have contributed to the development of cutting-edge technologies in the semiconductor field.

Conclusion

Tomohiro Migita's contributions to semiconductor manufacturing demonstrate his expertise and innovative spirit. His patent for a method of manufacturing a semiconductor device showcases his commitment to advancing technology. His work continues to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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