The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
May. 08, 2013
Canon Kabushiki Kaisha, Tokyo, JP;
Nobuyuki Suzuki, Oita, JP;
Tomohiro Migita, Ebina, JP;
Satoshi Suzuki, Fujisawa, JP;
Masanobu Ohmura, Yokohama, JP;
Takatoshi Nakahara, Oita, JP;
Keiichi Sasaki, Oita, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device having a twin well structure is provided. The method includes ion-implanting of a first conductivity type impurity in a first region and a second region of a semiconductor substrate, the first and second regions being located adjacent to each other; forming a first resist pattern to cover the first region of the semiconductor substrate and to expose the second region of the semiconductor substrate; ion-implanting of a second conductivity type impurity at a higher concentration compared to the first conductivity type impurity in the second region of the semiconductor substrate, with the first resist pattern being used as a mask; and thermal-diffusing the first conductivity type of impurity and the second conductivity type of impurity.