This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignees: Denso Corporation, Mirise Technologies Corporation, Toyota Jidosha Kabushiki Kaisha. Active years: 2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
1 out of 20,407 
1 out of 174 
1 out of 38,912 
Years Active: 2025
Title: Tomofumi Niibayashi: Innovator in Semiconductor Technology
Introduction
Tomofumi Niibayashi is a notable inventor based in Nisshin, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.
Latest Patents
Niibayashi holds 1 patent for a semiconductor device. This device includes a substrate, a drift layer of a first conductivity type, a first electrode, a second electrode, a plurality of gate electrodes, and a plurality of repeat regions of a second conductivity type. The design features distinct cell and repeat pitches, which optimize the device's functionality.
Career Highlights
Throughout his career, Niibayashi has worked with prominent companies in the automotive and technology sectors. He has been associated with Denso Corporation and Toyota Jidosha Kabushiki Kaisha, where he has applied his expertise in semiconductor technology to advance their product offerings.
Collaborations
One of his notable collaborators is Masato Noborio. Their partnership has contributed to the development of innovative solutions in the semiconductor field.
Conclusion
Tomofumi Niibayashi's contributions to semiconductor technology exemplify the impact of innovation in modern electronics. His work continues to influence the industry and inspire future advancements.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile