The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Feb. 22, 2023
Denso Corporation, Kariya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Mirise Technologies Corporation, Nisshin, JP;
DENSO CORPORATION, Kariya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
MIRISE Technologies Corporation, Nisshin, JP;
Abstract
A semiconductor device includes a substrate, a drift layer of a first conductivity type, a first electrode, a second electrode, a plurality of gate electrodes, and a plurality of repeat regions of a second conductivity type. When center lines respectively passing through centers of the gate electrodes in an arrangement direction of the gate electrodes and extending in a thickness direction of the substrate are defined as cell center lines, a distance between adjacent two of the cell center lines is defined as a cell pitch, center lines respectively passing through centers of the repeat regions in the arrangement direction are defined as repeat center lines, and a distance between adjacent two of the repeat center lines in the arrangement direction is defined as a repeat pitch, the cell pitch is different from the repeat pitch.