Tokyo, Japan

Tomofumi Furuta

This inventor holds 1 USPTO granted patent. Top assignee: Nippon Telegraph and Telephone Corporation. Active years: 1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tomofumi Furuta. Retrieved from https://idiyas.com/inventor/tomofumi-furuta

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 54(Granted Patents)


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: Tomofumi Furuta: Innovator in Photodiode Technology

Introduction

Tomofumi Furuta is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of photodiode technology, particularly with his innovative designs that enhance performance metrics.

Latest Patents

Furuta holds a patent for a "Pin photodiode with improved frequency response and saturation output." This invention features a unique structure that improves frequency response and saturation output while maintaining effective internal quantum efficiency and CR time constant. The design includes multiple semiconductor layers with varying doping concentrations, ensuring optimal functionality as a light absorption layer.

Career Highlights

Furuta is associated with Nippon Telegraph and Telephone Corporation, where he has been instrumental in advancing photodiode technology. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Furuta has collaborated with esteemed colleagues such as Tadao Ishibashi and Naofumi Shimizu. Their combined expertise has contributed to the success of various projects within the company.

Conclusion

Tomofumi Furuta's innovative work in photodiode technology exemplifies the impact of dedicated inventors in advancing electronic components. His contributions continue to influence the field and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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