Yamanashi, Japan

Tomoaki Ogiwara

This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignee: Tokyo Electron Limited. Active years: 2016-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tomoaki Ogiwara. Retrieved from https://idiyas.com/inventor/tomoaki-ogiwara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 2.9

ph-index = 1


Location History:

  • Gyeonggi-do, KR (2016)
  • Yamanashi, JP (2020)

Company Filing History:


Years Active: 2016-2020

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2 patents (USPTO):Explore Patents

Title: The Innovations of Tomoaki Ogiwara

Introduction

Tomoaki Ogiwara is a notable inventor based in Yamanashi, Japan. He has made significant contributions to the field of substrate processing, holding two patents that showcase his innovative methods. His work is primarily associated with Tokyo Electron Limited, a leading company in the semiconductor industry.

Latest Patents

Ogiwara's latest patents include a substrate processing method and a substrate processing apparatus. The substrate processing method focuses on removing an oxide film formed on a substrate's surface. This method involves transforming the oxide film into a reaction by-product by supplying a halogen element-containing gas and a basic gas to the substrate in a processing chamber. The process includes sublimating the reaction by-product to remove it from the substrate by alternating the supply of gases.

Additionally, his etching method involves a modification process that supplies a mixture gas to a silicon oxide film's surface. This process modifies the film to generate a reaction product, followed by a heating process to remove the reaction product. The method includes two modification steps, ensuring effective etching of the silicon oxide film.

Career Highlights

Throughout his career, Ogiwara has demonstrated a commitment to advancing substrate processing technologies. His patents reflect a deep understanding of chemical processes and their applications in semiconductor manufacturing. His work has contributed to the efficiency and effectiveness of substrate processing methods.

Collaborations

Ogiwara has collaborated with notable colleagues, including Hiroyuki Takahashi and Takuya Abe. These collaborations have likely enhanced the innovation and development of his patented technologies.

Conclusion

Tomoaki Ogiwara's contributions to substrate processing through his patents highlight his role as a significant inventor in the semiconductor industry. His innovative methods continue to influence the field and demonstrate the importance of research and development in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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