Tokyo, Japan

Tomo Sakanoue

USPTO Granted Patents = 2 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2018-2023

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2 patents (USPTO):Explore Patents

Title: Tomo Sakanoue: Innovator in Quantum Dot Technology

Introduction

Tomo Sakanoue is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of quantum dot technology, holding a total of 2 patents. His work focuses on innovative methods for producing InP-based quantum dots, which have applications in various advanced technologies.

Latest Patents

Sakanoue's latest patents include a method for producing an InP quantum dot precursor and a method for producing InP-based quantum dots. The first patent describes a process that utilizes a silylphosphine compound as a phosphorus source, ensuring a specific content of another compound to optimize the production of the precursor. The second patent outlines a method for heating the InP quantum dot precursor to achieve the desired quantum dot characteristics, specifically within a temperature range of 200°C to 350°C.

Career Highlights

Throughout his career, Sakanoue has worked with notable organizations such as Nippon Chemical Industrial Co., Ltd. and Waseda University. His experience in these institutions has allowed him to advance his research and contribute to the development of cutting-edge technologies in the field of electrochemical light-emitting cells.

Collaborations

Sakanoue has collaborated with esteemed colleagues, including Fumihiro Yonekawa and Taishi Takenobu. These partnerships have fostered a collaborative environment that enhances innovation and research in quantum dot technology.

Conclusion

Tomo Sakanoue's contributions to the field of quantum dot technology are noteworthy, with his innovative patents paving the way for advancements in various applications. His work continues to influence the industry and inspire future research in this exciting area of technology.

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