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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11692134 B1

PDFFull Text
Date of Patent:
Jul. 04, 2023

Filed:

Mar. 26, 2020

Method for producing inp quantum dot precursor and method for producing inp-based quantum dot

Applicant:

Nippon Chemical Industrial Co., Ltd., Tokyo, JP;

Inventors:

Kazuhiro Nakatsui, Tokyo, JP;

Taiki Tsuzukiishi, Tamura-gun, JP;

Tomo Sakanoue, Tokyo, JP;

Assignee:

NIPPON CHEMICAL INDUSTRIAL CO., LTD., Tokyo, JP;

Attorney:

WHDA, LLP

Primary Examiner:

C Melissa Koslow

Int. Cl.
CPC ...
C09K 11/70 (2006.01); C01B 25/08 (2006.01); C07F 9/06 (2006.01); C09K 11/08 (2006.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C09K 11/70 (2013.01); C01B 25/087 (2013.01); C07F 9/06 (2013.01); C09K 11/0883 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); C01P 2004/64 (2013.01);
Abstract

The present invention relates to a method for producing an InP-based quantum dot precursor from a phosphorus source and an indium source, in which a silylphosphine compound represented by the following Formula (1) with a content of a compound represented by the following Formula (2) of 0.3 mol % or less is used as the phosphorus source. Further, the present invention provides a method for producing an InP-based quantum dot comprising heating an InP quantum dot precursor to a temperature of 200° C. or more and 350° C. or less to obtain an InP quantum dot. (R is as defined in the specification.)

Find Patent Forward Citations

Nakatsui, Kazuhiro. (2023). Method for producing inp quantum dot precursor and method for producing inp-based quantum dot (U.S. Patent No. 11692134). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11692134

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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