Sollentuna, Sweden

Tomas Jarstad

This inventor holds 1 USPTO granted patent. Top assignee: Telefonaktiebolaget Lm Ericsson (Publ). Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tomas Jarstad. Retrieved from https://idiyas.com/inventor/tomas-jarstad

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 21(Granted Patents)


Company Filing History:


Years Active: 2002

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Tomas Jarstad: Semiconductor Contact and Shielding Innovation.

Introduction

Tomas Jarstad is an inventor based in Sollentuna, Sweden. His patent work includes a semiconductor design focused on creating low-resistance electrical connections to an integrated-circuit substrate.

Latest Patents

Jarstad is associated with 1 patent, titled “Substrate Contacts and Shielding Devices in a Semiconductor Component.” The patent describes apparatus and manufacturing methods for producing low-resistance substrate contacts in integrated circuits. The contacts are conductive plugs positioned outside active-component areas, connecting the substrate to the circuit’s top portion. Multiple metal plugs provide the electrical interconnection.

Career Highlights

Jarstad’s documented invention addresses substrate-contact resistance, an important consideration in integrated-circuit design and manufacturing. He is associated with Telefonaktiebolaget LM Ericsson (publ).

Collaborations

Jarstad’s listed coworker is Hans Norström. Their association reflects a professional connection in the context of the available inventor and patent information.

Conclusion

Tomas Jarstad’s patent documents a practical approach to low-resistance substrate connections in semiconductor components, contributing to the broader field of integrated-circuit innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…