Tokuaki Nihashi

Title: Tokuaki Nihashi: Innovator in Photoelectric Technologies

Introduction

Tokuaki Nihashi is a prominent inventor based in Hamamatsu, Japan. He has made significant contributions to the field of photoelectric technologies, holding a total of 9 patents. His work focuses on enhancing the efficiency of photoelectric surface members and semiconductor photocathodes.

Latest Patents

Nihashi's latest patents include a process for producing a layered member and a semiconductor photocathode. The first patent aims to provide a photoelectric surface member that allows for higher quantum efficiency. This innovative member consists of a crystalline layer formed by a nitride-type semiconductor material. It features a nitride semiconductor crystal layer with a specific orientation, an adhesive layer along the first surface, and a glass substrate that is adhesively fixed to the adhesive layer.

The second patent describes a semiconductor photocathode that includes an AlGaN layer bonded to a glass substrate via an SiO layer. This photocathode features an alkali-metal-containing layer formed on the AlGaN layer. The AlGaN layer is structured with distinct regions, including a semiconductor superlattice structure that enhances its performance.

Career Highlights

Throughout his career, Tokuaki Nihashi has worked with notable companies such as Hamamatsu Photonics K.K. and Sanken Electric Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative technologies.

Collaborations

Nihashi has collaborated with esteemed colleagues, including Shunro Fuke and Masatomo Sumiya. Their joint efforts have contributed to advancements in the field of photoelectric devices.

Conclusion

Tokuaki Nihashi's work in photoelectric technologies showcases his dedication to innovation and efficiency. His patents reflect a commitment to advancing the capabilities of semiconductor materials and devices.