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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7525131 B1

PDFFull Text
Date of Patent:
Apr. 28, 2009

Filed:

Aug. 29, 2006

Photoelectric surface and photodetector

Applicants:

Masatomo Sumiya, Tsukuba, JP;

Shunro Fuke, Hamamatsu, JP;

Tokuaki Nihashi, Hamamatsu, JP;

Minoru Hagino, Hamamatsu, JP;

Inventors:

Masatomo Sumiya, Tsukuba, JP;

Shunro Fuke, Hamamatsu, JP;

Tokuaki Nihashi, Hamamatsu, JP;

Minoru Hagino, Hamamatsu, JP;

Assignees:

National University Corporation Shizuoka University, Shizuoka-shi, Shizuoka, JP;

Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;

Attorney:

Drinker Biddle & Reath LLP

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 29/732 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2006.01); H01L 31/109 (2006.01); H01L 29/06 (2006.01); H01L 29/12 (2006.01); H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 31/036 (2006.01); H01L 31/0376 (2006.01); H01L 31/20 (2006.01); H01L 27/15 (2006.01); H01L 33/00 (2006.01); H01L 29/74 (2006.01); H01L 31/062 (2006.01); H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride semiconductor layer provided adjacent to the first group III nitride semiconductor layer and made of a thin-film crystal having c-axis orientation in a thickness direction, the second group III nitride semiconductor layer having an Al composition higher than that of the first group III nitride semiconductor layer.

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