The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 1986
Filed:
Apr. 30, 1985
Hamamatsu Photonics Kabushiki Kaisha, Hamamatsu, JP;
Abstract
Disclosed is a new type of transparent GaAs photo electric layer formed on an optical window made of a GaP single crystal substrate via an Al.sub.x Ga.sub.(1-x) As buffer layer, in which a gradual-lattice-constant layer of quadruple Al.sub.x Ga.sub.(1-x) PyAs.sub.(1-y) compound crystal is formed between the GaP single crystal substrate and the Al.sub.x Ga.sub.(1-x) As buffer layer. The y content in the gradual-lattice-constant layer of quadruple Al.sub.x Ga.sub.(1-x) PyAs.sub.(1-y) compound crystal changes from 1 to 0 as deposition of the gradual-lattice-constant layer of quadruple Al.sub.x Ga.sub.(1-x) PyAs.sub.(1-y) compound crystal goes on while the x content can arbitrarily be selected in the range of 0 to 1.