Masashi Ohta

Title: Masashi Ohta: Innovator in Photocathode Technology

Introduction

Masashi Ohta is a prominent inventor based in Shizuoka, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of photocathodes. With a total of 2 patents, Ohta's work has advanced the understanding and application of photoelectric materials.

Latest Patents

Ohta's latest patents include a photocathode featuring an AlGaN layer with a specified Mg content concentration. This innovative design allows ultraviolet light to pass through the surface layer and reach an optical absorption layer, where photoelectrons are generated. The energy band curvature at the interface facilitates the ejection of photoelectrons, resulting in a solar-blind type semiconductor photocathode with high quantum efficiency. Another notable patent is for a transparent GaAs photoelectric layer, which is formed on a GaP single crystal substrate. This layer incorporates a gradual-lattice-constant layer of quadruple AlGaPyAs compound crystal, enhancing the performance of the optical window.

Career Highlights

Throughout his career, Masashi Ohta has worked with notable companies such as Hamamatsu Photonics K.K. and Hamamatsu Photonics Kabushiki Kaisha. His experience in these organizations has contributed to his expertise in the field of photonics and semiconductor technology.

Collaborations

Ohta has collaborated with esteemed colleagues, including Minoru Niigaki and Hirofumi Kan. These partnerships have fostered innovation and development in his research endeavors.

Conclusion

Masashi Ohta's contributions to photocathode technology and semiconductor materials have positioned him as a key figure in the field. His innovative patents and collaborations continue to influence advancements in photonics.