Mesa, AZ, United States of America

Todd Snider

This inventor holds 1 USPTO granted patent. Top assignee: Intel Corporation. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Todd Snider. Retrieved from https://idiyas.com/inventor/todd-snider-p0zys7nl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Todd Snider - Innovator in Semiconductor Technology

Introduction

Todd Snider is a prominent inventor based in Mesa, AZ (US). He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique patent that addresses critical design rules in semiconductor modeling.

Latest Patents

Todd Snider holds a patent for a method of semiconductor void placement. This patent involves determining regions of a semiconductor package layer that do not meet specific design rules. The process includes adding voids to these regions to ensure compliance with the design standards. His work enhances the efficiency and reliability of semiconductor manufacturing.

Career Highlights

Todd is currently employed at Intel Corporation, a leading company in the technology sector. His role at Intel allows him to work on cutting-edge semiconductor technologies. With a focus on innovation, Todd has contributed to advancements that impact various electronic devices.

Collaborations

Throughout his career, Todd has collaborated with talented individuals such as Prakaram Joshi and Srinivas Moola. These collaborations have fostered a creative environment that encourages the exchange of ideas and expertise.

Conclusion

Todd Snider is a key figure in semiconductor innovation, with a patent that showcases his expertise in the field. His work at Intel Corporation and collaborations with other professionals highlight his commitment to advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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