Noblesville, IN, United States of America

Todd G Nakanishi


Average Co-Inventor Count = 3.7

ph-index = 4

Forward Citations = 104(Granted Patents)


Location History:

  • Kokomo, IN (US) (1991 - 1996)
  • Noblesville, IN (US) (1999 - 2000)

Company Filing History:


Years Active: 1991-2000

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4 patents (USPTO):Explore Patents

Title: Todd G Nakanishi: Innovator in Electrical Engineering

Introduction

Todd G Nakanishi is a notable inventor based in Noblesville, IN (US). He has made significant contributions to the field of electrical engineering, particularly in the development of innovative switching modules. With a total of 4 patents to his name, Nakanishi continues to push the boundaries of technology.

Latest Patents

One of Nakanishi's latest patents is the Parallel Dual Switch Module. This module is characterized by improved mechanical and electrical packaging efficiency and low cost. It includes a common terminal defined by a first stamped elongate metal plate insert molded into the module housing, along with positive and negative terminals defined by second and third stamped elongate metal plates disposed side-by-side atop the common terminal. The connection areas formed on the positive and negative terminals extend in opposite lateral directions and interdigitate with connection areas formed on the common terminal, thereby forming two linear parallel rows of connection areas. Additionally, adjacent each row of connection areas, and mounted on a baseplate of the module, is a set of parallel connected transistor subassemblies. A molded elongate gate collection component is mounted on the baseplate between the sets of transistor subassemblies and beneath the common terminal. This component confines a pair of insert molded gate terminal strips to which the gate terminals of the respective sets of transistor subassemblies are connected. The terminal strips, in turn, are coupled to gate terminals of the module. The transistor subassemblies are mounted in close proximity to the central terminal structure, and the metal tabs of the subassemblies are shaped to prevent interference with the overlying terminal connection areas and to provide stress relief.

Another significant patent is the Durable Substrate Subassembly for a Transistor Switch Module. This substrate subassembly is designed for high power transistor switching modules and is durable because wire bonds to the semiconductor device electrodes are replaced with a soldered metal/ceramic composite conductor. The part of the composite conductor that contacts the semiconductor device has a coefficient of thermal expansion close to that of the semiconductor device. The metal of the composite conductor is preferably a strip of copper foil, while the ceramic portion is a layer of alumina on the copper foil that is generally coextensive with the semiconductor device electrodes.

Career Highlights

Todd G Nakanishi works at Delco Electronics Corporation, where he has been instrumental in advancing

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