Delco Electronics Corporation

Todd G Nakanishi

Charles T Eytcheson

Frank D Lachenmaier

Michael D Bramel

Erich William Gerbsch

Lisa A Viduya

John D Tagle

Robert J Campbell

Roger A Mock

Monty B Hayes

Eric Von Kierstead

Matthew F Taylor

A parallel dual switch module that is characterized by improved mechanical and electrical packaging efficiency and low cost. The module includes a common terminal defined by a first stamped elongate metal plate insert molded into the module housing, and positive and negative terminals defined by second and third stamped elongate metal plates disposed side-by-side atop the common terminal. Connection areas formed on the positive and negative terminals extend in opposite lateral directions, and interdigitate with connection areas formed on the common terminal, thereby forming two linear parallel rows of connection areas. Adjacent each row of connection areas, and mounted on a baseplate of the module is a set of parallel connected transistors subassemblies. A molded elongate gate collection component is mounted on the baseplate between the sets of transistor subassemblies, and beneath the common terminal. The gate collection component confines a pair of insert molded gate terminal strips to which the gate terminals of the respective sets of transistor subassemblies are connected, and the terminal strips, in turn, are coupled to gate terminals of the module. The transistor subassemblies are mounted in close proximity to the central terminal structure, and the metal tabs of the subassemblies are shaped to prevent interference with the overlying terminal connection areas, and to provide stress relief.

Parallel dual switch module

A durable substrate subassembly for a high power transistor switching module. The substrate subassembly is durable because wire bonds to the semiconductor device electrodes are replaced with a soldered metal/ceramic composite conductor. The part of the composite conductor contacting the semiconductor device has a coefficient of thermal expansion close to that of the semiconductor device. The metal of the composite conductor is preferably a strip of copper foil. The ceramic portion is a layer of alumina on the copper foil that is generally coextensive with the semiconductor device electrodes.

Durable substrate subassembly for transistor switch module

A readily manufacturable low inductance linear semiconductor switching module having coplanar contacts. Also disclosed is a pretestable terminal subassembly for such a module, and a method of making such a terminal subassembly. The module can contain high power, high frequency semiconductor switching devices, operating at high power but low inductance. The module incorporates compositional, geometrical and electrical symmetry in a linear configuration. The terminal subassembly is readily fabricated and assembled into the module. In addition, it permits use of short internal leads that are readily connected to the terminal subassembly.

Coplanar linear dual switch module

A welding mask for ultrasonic welding has a part positioning window that receives a first metallic part that is ultrasonically welded to a second metallic part. The mask is engaged with a top surface of the second part and the first part is then placed in the window with its lower surface engaging an upper surface of the second part. The first part is then engaged by ultrasonic welding apparatus which vibrates it and causes it to be welded to the second part. The internal walls defining the window are comprised of a first portion having parallel surfaces which can contact the edges of the first part. Extending from the first portion to the lower surface of the mask is a slanted or chamfered surface that slants away from the edges of the first part and does not contact the edges of the first part. The purpose of the chamfered surface is to prevent the first part from becoming adhered to the welding mask during ultrasonic welding.

Ultrasonic welding mask

Growing community of inventors

Noblesville, IN, United States of America

Todd G Nakanishi