This inventor holds 1 USPTO granted patent. Top assignees: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation. Active years: 2018.
Company Filing History:
Years Active: 2018
Title: Innovations by Inventor Tingting Peng
Introduction
Tingting Peng is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique patent that addresses critical challenges in semiconductor fabrication.
Latest Patents
Tingting Peng holds a patent for a shallow trench isolation structure and the method of fabricating it. The patent outlines a method that includes providing a semiconductor substrate, forming a shallow trench, and creating a first insulating layer. The process involves etching the first insulating layer to increase the width of an opening, performing plasma treatment, cleaning the surface, and filling a second insulating layer into the trench. This invention is crucial for enhancing the performance and reliability of semiconductor devices.
Career Highlights
Throughout his career, Tingting Peng has worked with prominent companies in the semiconductor industry. He has been associated with Semiconductor Manufacturing International Corporation in both Beijing and Shanghai. His experience in these leading firms has allowed him to refine his skills and contribute to groundbreaking innovations in semiconductor technology.
Collaborations
Tingting has collaborated with talented individuals in his field, including Hao Deng and Yan Yan. These collaborations have fostered an environment of innovation and have led to the successful development of advanced semiconductor technologies.
Conclusion
Tingting Peng's contributions to semiconductor technology through his patent and career achievements highlight his role as an influential inventor. His work continues to impact the industry positively, paving the way for future advancements in semiconductor fabrication.